The 2021 publication in Nature Nanotechnology titled "Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire" highlighted the pivotal role of miscut (off-axis) sapphire substrates in achieving high-quality, 2-inch monolayer MoS₂ single crystals. The stepped surface morphology induced by specifically angled miscuts—particularly those oriented toward the C/A axis—has emerged as a game-changer, enabling superior nucleation control and crystalline uniformity.
This breakthrough has fueled rapid adoption of these specialized substrates among researchers worldwide, with the C-A 1° miscut angle now dominating experimental and industrial use due to its reproducible performance advantages. If you are exploring advancements in 2D semiconductor epitaxy or seeking substrates optimized for wafer-scale growth, we invite you to connect with our team to access this cutting-edge platform.
